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Thermal Management
Thermal management is vital for the
performance, reliability and lifetime of high-speed packages and
systems. BroadPak offers comprehensive thermal management
solution to aid in package selection as well as post design and
system level simulation and analysis.
Designing package substrate with low thermal tolerance can be
costly since it can lead to overheating and failure of the chip.
BroadPak guarantees an optimal thermal design of cost verses
performance. Facts about seriousness of thermal management:
-- With the increase in temperature leakage increase
exponentially
-- At 65nm leakage counts for 70% of total power loss
-- Increase in temperature has adverse effect on timing
-- Electromigration increases exponentially with temperature
-- Resistant is linearly dependent on temperature, effecting IR
drop
-- Clock gating increases on-chip thermal variation
It is important to account for power leakage in addition to
on-chip temperature, electromigration, reliability and IR drop
during thermal analysis.
One of the key challenges at 40nm is managing thermal effects
with regards to timing, signal and power integrity. In vast
majority of the thermal analysis done today, temperature is
assumed to be constant across the surface of the silicon chip.
But, in reality, today's large and dense dice can exhibit
significant thermal gradient across the surface of the die and
the device layers.
Depending on the switching activity of the device, temperature
as much as 40 degree Celsius can vary cross the surface of the chip.
Similarly, the same gradient can occur across the device layers.
This variation in temperature across the die as well as mismatch
in coefficient of thermal expansion (CTE) between the die and
substrate can cause warpage, die crack and/or solder joint
crack/short.
BroadPak determines any possible failure scenarios such as
cracks, interfacial delimitation and popcorning, etc. through
conjugate thermo-fluid and structural-stress analysis. |
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Flip chip on substrate meshed with Hex
elements to accurately simulate and capture the thermal and subsequent
stress effect |
